r09ds0033ej0100 rev.1.00 page 1 of 7 mar 28, 2012 data sheet ne5550279a silicon power ldmos fet features ? high output power : p out = 33.0 dbm typ. (v ds = 7.5 v, i dset = 40 ma, f = 460 mhz, p in = 15 dbm) ? high power added efficiency : add = 68% typ. (v ds = 7.5 v, i dset = 40 ma, f = 460 mhz, p in = 15 dbm) ? high linear gain : g l = 22.5 db typ. (v ds = 7.5 v, i dset = 40 ma, f = 460 mhz, p in = 0 dbm) ? high esd tolerance ? suitable for vhf to uhf-band class-ab power amplifier. applications ? 150 mhz band radio system ? 460 mhz band radio system ? 900 mhz band radio system ordering information part number order number package marking supplying form ne5550279a ne5550279a-a 79a (pb free) w7 ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape NE5550279A-T1 NE5550279A-T1-a ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ? qty 1 kpcs/reel NE5550279A-T1a NE5550279A-T1a-a ? 12 mm wide embossed taping ? gate pin faces the perforation side of the tape ? qty 5 kpcs/reel remark to order evaluation samples, please contact your nearby sales office. part number for sample order: ne5550279a absolute maximum ratings (t a = 25 c, unless otherwise specified) operation in excess of any one of these parameters may result in permanent damage. parameter symbol ratings unit drain to source voltage v ds 30 v gate to source voltage v gs 6.0 v drain current i ds 0.6 a drain current (50% duty pulsed) i ds-pulse 1.2 a total power dissipation note p tot 6.25 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c note: value at t c = 25 c caution observe precautions when handling because these devi ces are sensitive to electrostatic discharge. r09ds0033ej0100 rev.1.00 mar 28, 2012
ne5550279a r09ds0033ej0100 rev.1.00 page 2 of 7 mar 28, 2012 recommended operating range (t a = 25 c) parameter symbol test conditi ons min. typ. max. unit drain to source voltage v ds ? 7.5 9.0 v gate to source voltage v gs 1.65 2.20 2.85 v drain current i ds ? 0.4 ? a input power p in f = 460 mhz, v ds = 7.5 v ? 15 20 dbm electrical characteristics (t a = 25 c, unless otherwise specified) parameter symbol test conditi ons min. typ. max. unit dc characteristics gate to source leakage current i gss v gs = 6.0 v ? ? 100 na drain to source leakage current (zero gate voltage drain current) i dss v ds = 25 v ? ? 10 a gate threshold voltage v th v ds = 7.5 v, i ds = 1.0 ma 1.15 1.65 2.25 v drain to source breakdown voltage bv dss i ds = 10 a 25 38 ? v transconductance g m v ds = 7.5 v, i ds = 100 100 ma 1.8 2.2 2.9 s thermal resistance r th channel to case ? 20.0 ? c/w rf characteristics output power p out f = 460 mhz, v ds = 7.5 v, 31.5 33.0 ? dbm drain current i ds p in = 15 dbm, ? 0.38 ? a power drain efficiency d i dset = 40 ma (rf off) ? 70 ? % power added efficiency add ? 68 ? % linear gain g l note ? 22.5 ? db note: p in = 0 dbm remark dc performance is 100% testing. rf performanc e is testing several samples per wafer. wafer rejection criteria for standard dev ices is 1 reject for several samples.
ne5550279a r09ds0033ej0100 rev.1.00 page 3 of 7 mar 28, 2012 test circuit schematic for 460 mhz c20 c10 l2 l3 l4 in out c22 c11 c13 c21 c12 c14 c1 vds c1 l1 r1 vgs fet ne5550279a 50 50 components of test circuit for measuring electrical characteristics symbol value type maker c1 1 f grm188b31c105ka92 murata c10 22 pf grm1882c1h220ja01 murata c11 1.2 pf atc100a1r2jw american technical ceramics c12 4.7 pf atc100a4r7bw american technical ceramics c13 15 pf atc100a150bw american technical ceramics c14 12 pf atc100a120bw american technical ceramics c20 10 pf atc100a100jw american technical ceramics c21 3.9 pf atc100a3r9bw american technical ceramics c22 100 pf atc100a101jw american technical ceramics r1 2 k 1/10 w chip resistor koa rk73b1jttd202j l1 123 nh 0.5 mm, d = 3 mm, 10 turns ohesangyou l2 10 nh lqw18an10ng00 murata l3 9.8 nh 0.4 mm, d = 1.6 mm, 3 turns ohesangyou l4 20 nh 0.5 mm, d = 3 mm, 2 turns ohesangyou pcb ? r4775, t = 0.4 mm, r = 4.5, size = 30 48 mm panasonic sma connecter ? waka 01k0790-20 waka component layout of t est circuit for 460 mhz l1 c1 c1 l2 c10 l3 l4 c22 c20 c12 c14 c11 c21 r1 c13
ne5550279a r09ds0033ej0100 rev.1.00 page 4 of 7 mar 28, 2012 typical characteristics 1 (t a = 25 c) r: f = 460 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p in = ? 10 to 20 dbm im: f1 = 460 mhz, f2 = 461 mhz, v ds = 3.6/4.5/6/7.5/9 v, i dset = 40 ma, p out (2 tone) = 8 to 32 dbm 40 25 0.1 0 1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 ? 10 ? 5 10 15 0 5 25 20 30 35 ?15 ?10 ?5 0 5 10 15 20 p out - 3.6 v p out - 4.5 v p out - 6.0 v p out - 7.5 v p out - 9.0 v i ds - 3.6 v i ds - 6.0 v i ds - 4.5 v i ds - 9.0 v i ds - 7.5 v 40 25 10 0 80 20 30 40 50 60 70 0 5 10 15 20 25 30 35 ?15 ?10 ?5 0 5 10 15 20 g p - 3.6 v g p - 4.5 v g p - 6.0 v g p - 7.5 v g p - 9.0 v add - 3.6 v add - 6.0 v add - 4.5 v add - 9.0 v add - 7.5 v ?70 0 ? 10 ? 20 ?30 ?40 ?50 ?60 ?70 0 ? 10 ? 20 ?30 ?40 ?50 ?60 40 30 25 20 51015 35 35 30 25 20 51015 2f 0 - 3.6 v 2f 0 - 4.5 v 2f 0 - 6.0 v 2f 0 - 7.5 v 2f 0 - 9.0 v 3f 0 - 3.6 v 3f 0 - 6.0 v 3f 0 - 4.5 v 3f 0 - 9.0 v 3f 0 - 7.5 v im 3 - 3.6 v im 3 - 4.5 v im 3 - 6.0 v im 3 - 7.5 v im 3 - 9.0 v im 5 - 3.6 v im 5 - 6.0 v im 5 - 4.5 v im 5 - 9.0 v im 5 - 7.5 v 3rd/5th order intermodulation distortion im 3 /im 5 (dbc) 2 tones output power p out (2 tone) (dbm) output power p out (dbm) drain current i ds (a) input power p in (dbm) power gain g p (db) power added efficiency add (%) input power p in (dbm) 2nd harmonics 2f 0 (dbc) 3rd harmonics 3f 0 (dbc) output power p out (dbm) im 3 /im 5 vs. 2 tones output power 2f 0 , 3f 0 vs. output power output power, drain current vs. input power power gain, power added efficiency vs. input power remark the graphs indicate nominal characteristics.
ne5550279a r09ds0033ej0100 rev.1.00 page 5 of 7 mar 28, 2012 s-parameters s-parameters and noise parameters are provided on our web s ite in a format (s2p) that en ables the direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [rf devices] [design support] [development data download] url http://www.renesas.com/produc ts/microwave/download/index.jsp
ne5550279a r09ds0033ej0100 rev.1.00 page 6 of 7 mar 28, 2012 package dimensions 79a (unit: mm) 0.90.2 0.20.1 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain w 7 27001 79a package recommended p.c.b. layout (unit: mm) 1.7 4.0 0.5 1.0 5.9 1.2 gate source drain 0.5 6.1 0.5 through hole: 0.2 33 stop up the hole with a rosin or something to avoid solder flow.
ne5550279a r09ds0033ej0100 rev.1.00 page 7 of 7 mar 28, 2012 recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales office. soldering method soldering conditions condition symbol infrared reflow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of reflow processes : 3 times maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ir260 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (pack age surface temperature) : 120 c or below maximum number of flow processes : 1 time maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below ws260 partial heating peak temperature (terminal temperature) : 350 c or below soldering time (per side of device) : 3 seconds or less maximum chlorine content of rosin flux (% mass) : 0.2% (wt.) or below hs350 caution do not use different soldering methods together (except for partial heating).
all trademarks and registered trademarks are t he property of their respective owners. c - 1 revision history ne5550279a data sheet description rev. date page summary 1.00 mar 28, 2012 ? first edition issued
notice 1. all information included in this document is current as of the date this document is issued. such information, however, is s ubject to change without any prior notice. before purchasing or using any renesas electronics products listed herein, please confirm the latest product information with a renesas electronics sales office. also , please pay regular and careful attention to additional and different information to be disclosed by renesas electronics such as that disclosed through our website. 2. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 3. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . 4. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applicable export control l aws and regulations and follow the procedures required by such laws and regulations. you should not use renesas electronics products or the technology described in this document for any purpose rela ting to military applications or use by the military, including but not limited to the development of weapons of mass destruction. renesas electronics products and technology may not be used for or incorporate d into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign laws or regulations. 6. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 7. renesas electronics products are classified according to the following three quality grades: "standard", "high quality", an d "specific". the recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. you must check the quality grade of each renesas electronics produ ct before using it in a particular application. you may not use any renesas electronics product for any application categorized as "specific" without the prior written consent of renesas electronics. fu rther, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. renesas electronics shall not be in any way liable for any damages or losses incurred by you or third parties arising from the use of any renesas electronics product for an application categorized as "specific" or for which the product is not intended wh ere you have failed to obtain the prior written consent of renesas electronics. the quality grade of each renesas electronics product is "standard" unless otherwise expressly specified in a renesas electroni cs data sheets or data books, etc. "standard": computers; office equipment; communications equipment; test and measurement equipment; audio and visual equipment ; home electronic appliances; machine tools; personal electronic equipment; and industrial robots. "high quality": transportation equipment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; anti-crime systems; safety equipment; and medical equipment not specifically designed for life support. "specific": aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or syst ems for life support (e.g. artificial life support devices or systems), surgical implantations, or healthcare intervention (e.g. excision, etc.), and any other applications or purposes that pose a direct thr eat to human life. 8. you should use the renesas electronics products described in this document within the range specified by renesas electronics , especially with respect to the maximum rating, operating supply voltage range, movement power voltage range, heat radiation characteristics, installation and other product characteristics. renesas el ectronics shall have no liability for malfunctions or damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its products, semiconductor products have s pecific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. further, renesas electronics products are not subject to radiation resistance design . please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a renesas electronics produc t, such as safety design for hardware and software including but not limited to redundancy, fire control and malfunction prevention, appropriate treatment for aging degradation or any other appropriate measu res. because the evaluation of microcomputer software alone is very difficult, please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesas electronics sales office for details as to environmental matters such as the environmental compati bility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, in cluding without limitation, the eu rohs directive. renesas electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of renes as electronics. 12. please contact a renesas electronics sales office if you have any questions regarding the information contained in this doc ument or renesas electronics products, or if you have any other inquiries. (note 1) "renesas electronics" as used in this document means renesas electronics corporation and also includes its majority-o wned subsidiaries. (note 2) "renesas electronics product(s)" means any product developed or manufactured by or for renesas electronics. http://www.renesas.com refer to "http://www.renesas.com/" for the latest and detailed information. renesas electronics america inc. 2880 scott boulevard santa clara, ca 95050-2554, u.s.a. tel: +1-408-588-6000, fax: +1-408-588-6130 renesas electronics canada limited 1101 nicholson road, newmarket, ontario l3y 9c3, canada tel: +1-905-898-5441, fax: +1-905-898-3220 renesas electronics europe limited dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, u.k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40472 dsseldorf, germany tel: +49-211-65030, fax: +49-211-6503-1327 renesas electronics (china) co., ltd. 7th floor, quantum plaza, no.27 zhichunlu haidian district, beijing 100083, p.r.china tel: +86-10-8235-1155, fax: +86-10-8235-7679 renesas electronics (shanghai) co., ltd. unit 204, 205, azia center, no.1233 lujiazui ring rd., pudong district, shanghai 200120, china tel: +86-21-5877-1818, fax: +86-21-6887-7858 / -7898 renesas electronics hong kong limited unit 1601-1613, 16/f., tower 2, grand century place, 193 prince edward road west, mongkok, kowloon, hong kong tel: +852-2886-9318, fax: +852 2886-9022/9044 renesas electronics taiwan co., ltd. 13f, no. 363, fu shing north road, taipei, taiwan tel: +886-2-8175-9600, fax: +886 2-8175-9670 renesas electronics singapore pte. ltd. 1 harbourfront avenue, #06-10, keppel bay tower, singapore 098632 tel: +65-6213-0200, fax: +65-6278-8001 renesas electronics malaysia sdn.bhd. unit 906, block b, menara amcorp, amcorp trade centre, no. 18, jln persiaran barat, 46050 petaling jaya, selangor darul ehsan, malaysia tel: +60-3-7955-9390, fax: +60-3-7955-9510 renesas electronics korea co., ltd. 11f., samik lavied' or bldg., 720-2 yeoksam-dong, kangnam-ku, seoul 135-080, korea tel: +82-2-558-3737, fax: +82-2-558-5141 sales offices ? 2012 renesas electronics corporation. all rights reserved. colophon 1.1
|
